ELECTRON DIFFUSION LENGTH IN SOLUTION-GROWN GAAS-GE+

被引：16

作者：

ASHLEY, KL ^{[1
]}

CARR, DL ^{[1
]}

ROMANOMO.R ^{[1
]}

机构：

[1] SO METHODIST UNIV, ELECTR SCI CTR, DALLAS, TX 75222 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 01期

关键词：

D O I：

10.1063/1.1654458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：23 / 25

页数：3

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[1] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234
[2] OPTICAL MICROPROBE RESPONSE OF GAAS DIODES
ASHLEY, KL
BIARD, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) : 129 - &
[3] DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS
AUKERMAN, LW
MILLEA, MF
MCCOLL, M
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 685 - &
[4] GAAS JUNCTION LASERS CONTAINING AMPHOTERIC DOPANTS GE AND SI
BURNHAM, RD
DAPKUS, PD
HOLONYAK, N
KEUNE, DL
ZWICKER, HR
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 199 - &
[5] SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1957, 105 (01): : 139 - 144
[6] UV MICROPROBE TECHNIQUE FOR MEASUREMENT OF MINORITY-CARRIER DIFFUSIOM LENGTH IN GAP P-N JUNCTION MATERIAL
HWANG, CJ
HASZKO, SE
BERGH, AA
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5117 - +
[7] MEASUREMENT OF DIFFUSION LENGTHS IN P-TYPE GALLIUM ARSENIDE BY ELECTRON BEAM EXCITATION
RAOSAHIB, TS
WITTRY, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3745 - &
[8] DISTRIBUTION COEFFICIENT OF GERMANIUM IN GALLIUM ARSENIDE CRYSTALS GROWN FROM GALLIUM SOLUTIONS
ROSZTOCZY, FE
WOLFSTIRN, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 426 - +
[9] EFFICIENT ELECTRON EMISSION FROM GAAS-AL1-XGAXAS OPTOELECTRONIC COLD-CATHODE STRUCTURES
SCHADE, H
NELSON, H
KRESSEL, H
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (10) : 413 - &
[10] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +