ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS

[1] ABRAHAMS M, 1960, PROPERTIES ELEMENTAL

[2] DISLOCATION ETCH PITS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3626 - &

[3] ELECTRICAL ACTIVITY OF COPPER IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 221 - &

[4] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[5] EVIDENCE OF DISLOCATION JOGS IN DEFORMED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 705 - 709

[6] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

[7] GATOS HC, 1960, PROPERTIES ELEMENTAL

[8] GATOS HC, 1963, 293 LINC LAB TECH RE

[9] ON THE PLASTICITY OF GERMANIUM AND INDIUM ANTIMONIDE [J]. ACTA METALLURGICA, 1957, 5 (10): : 598 - 599

[10] THE REACTION OF GERMANIUM WITH AQUEOUS SOLUTIONS .1. DISSOLUTION KINETICS IN WATER CONTAINING DISSOLVED OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (11) : 654 - 660

[1] ABRAHAMS M, 1960, PROPERTIES ELEMENTAL

[2] DISLOCATION ETCH PITS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3626 - &

[3] ELECTRICAL ACTIVITY OF COPPER IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 221 - &

[4] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[5] EVIDENCE OF DISLOCATION JOGS IN DEFORMED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 705 - 709

[6] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

[7] GATOS HC, 1960, PROPERTIES ELEMENTAL

[8] GATOS HC, 1963, 293 LINC LAB TECH RE

[9] ON THE PLASTICITY OF GERMANIUM AND INDIUM ANTIMONIDE [J]. ACTA METALLURGICA, 1957, 5 (10): : 598 - 599

[10] THE REACTION OF GERMANIUM WITH AQUEOUS SOLUTIONS .1. DISSOLUTION KINETICS IN WATER CONTAINING DISSOLVED OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (11) : 654 - 660