DISLOCATION ETCH PITS IN GAAS

被引：17

作者：

ABRAHAMS, MS

机构：

来源：

关键词：

D O I：

10.1063/1.1713291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3626 / &

共 7 条

[1] ABRAHAMS M, 1960, PROPERTIES ELEMENTAL
[2] GATOS HC, 1960, PROPERTIES ELEMENTAL
[3] GATOS HC, 1963, PROGRESS SEMICONDUCT
[4] GIBSON A, 1963, PROGRESS SEMICONDUCT
[5] ETCH PITS IN GALLIUM ARSENIDE
RICHARDS, JL
CROCKER, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) : 611 - 612
[6] SCHELL HA, 1957, Z METALLKD, V48, P158
[7] MICROCLEAVAGE, BONDING CHARACTER AND SURFACE STRUCTURE IN MATERIALS WITH TETRAHEDRAL COORDINATION
WOLFF, GA
BRODER, JD
[J]. ACTA CRYSTALLOGRAPHICA, 1959, 12 (04): : 313 - &