MOLECULAR-BEAM EPITAXY WITH IONIZED BEAM DOPING

被引：3

作者：

MATSUNAGA, N ^{[1
]}

NAGANUMA, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 449

页数：7

共 18 条

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