MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY

被引：88

作者：

CHO, AY ^{[1
]}

PANISH, MB ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5118 / 5123

页数：6

相关论文

共 13 条

[1] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
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[4] EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE
CHO, AY
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[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
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[6] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS
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[7] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD
CHO, AY
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[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &
[8] MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS
CHO, AY
STOKOWSK, SE
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (09) : 565 - &
[9] MEAN ADSORPTION LIFETIMES AND ACTIVATION ENERGIES OF SILVER AND GOLD ON CLEAN, OXYGENATED, AND CARBURIZED TUNGSTEN SURFACES
CHO, AY
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[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3339 - +
[10] CHO AY, UNPUBLISHED