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MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS
被引:17
作者
:
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
STOKOWSK, SE
论文数:
0
引用数:
0
h-index:
0
STOKOWSK, SE
机构
:
来源
:
SOLID STATE COMMUNICATIONS
|
1971年
/ 9卷
/ 09期
关键词
:
D O I
:
10.1016/0038-1098(71)90146-3
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:565 / &
相关论文
共 13 条
[1]
VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(11)
: 2257
-
&
[2]
INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
: 4032
-
&
[3]
ARTHUR JR, PRIVATE COMMUNICATIO
[4]
COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
CASEY, HC
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4910
-
&
[5]
EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(02)
: 782
-
&
[6]
MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(07)
: 2780
-
&
[7]
CHO AY, TO BE PUBLISHED
[8]
CHO AY, 1970, 3 INT S GAAS REL COM
[9]
GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
HAYASHI, I
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 150
-
&
[10]
PANISH MB, 1969, IEEE J QUANTUM ELECT, VQE 5, P210
←
1
2
→
共 13 条
[1]
VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1967,
28
(11)
: 2257
-
&
[2]
INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
ARTHUR, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(08)
: 4032
-
&
[3]
ARTHUR JR, PRIVATE COMMUNICATIO
[4]
COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
CASEY, HC
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Incorporated, Murray Hill
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4910
-
&
[5]
EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(02)
: 782
-
&
[6]
MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(07)
: 2780
-
&
[7]
CHO AY, TO BE PUBLISHED
[8]
CHO AY, 1970, 3 INT S GAAS REL COM
[9]
GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
论文数:
0
引用数:
0
h-index:
0
HAYASHI, I
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
: 150
-
&
[10]
PANISH MB, 1969, IEEE J QUANTUM ELECT, VQE 5, P210
←
1
2
→