MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-RESISTIVITY ZNSE FILMS

Single-crystalline films of low-resistivity ZnSe have been successfully grown by molecular beam epitaxy (MBE). The film shows good crystallinity, having a smooth and flat surface as revealed by RHEED and SEM investigations. The resistivity of as-grown MBE ZnSe is low (typically ∼1 Ω cm) and the mobility of the film is relatively high (typically ∼300 cm2/V sec) at room temperature. The concentrations of the residual electrically active donor and acceptor centers are ND =8×1016 cm -3 and NA=6×1016 cm-3, respectively. The strong blue band-edge photoluminescence peak is observed even at room temperature, and the luminescence intensity at longer wavelength is very weak.