DEPENDENCE OF THE CHARACTERISTICS OF ZNSE MBE GROWN ON GAAS AND GAP ON THERMAL-TREATMENT IN A VACUUM

被引：8

作者：

NIINA, T

YONEDA, K

TODA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 10期

关键词：

D O I：

10.1149/1.2119530

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2099 / 2104

页数：6

共 10 条

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[3]

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[8] GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT EMITTING DIODES [J].

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[9]

Niina T., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P207

[10] AES STUDIES OF ARSENIC VACANCIES IN (III) GAAS ANNEALED SURFACES [J].

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