AES STUDIES OF ARSENIC VACANCIES IN (III) GAAS ANNEALED SURFACES

被引：10

作者：

TRUEBA, A ^{[1
]}

MUNOZ, E ^{[1
]}

PIQUERAS, J ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS,CANTO BLANCO,MADRID,SPAIN

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 15卷 / 02期

关键词：

D O I：

10.1016/0038-1098(74)90740-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：199 / 202

页数：4

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TSU, R .

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[5]

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[7]

KOSTER W, 1955, Z METALLKD, V46, P293

[8] STUDIES OF VAPORIZATION MECHANISM OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].

LOU, CY ;

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[9]

MCRAE AU, 1964, J APPL PHYS, V35, P1629

[10]

MCRAE AU, 1966, SURF SCI, V4, P247

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