VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS

被引：62

作者：

CHANG, LL

ESAKI, L

TSU, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 05期

关键词：

D O I：

10.1063/1.1653860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：143 / &

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共 13 条

[1] HALL-EFFECT LEVELS PRODUCED IN TE-DOPED GAAS CRYSTALS BY CU DIFFUSION
FULLER, CS
WOLFSTIRN, KB
ALLISON, HW
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2873 - +
[2] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[3] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5347 - &
[4] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163
[5] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
HAWRYLO, FZ
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5139 - &
[6] KYSER DF, 1966, ELECTRON MICROPROBE, P691
[7] MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188
[8] RECOMBINATION RADIATION IN GAAS
NATHAN, MI
BURNS, G
[J]. PHYSICAL REVIEW, 1963, 129 (01): : 125 - &
[9] PANISH MB, 1970, REFRACTORY MATERIALS, V6, P53
[10] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS
THURMOND, CD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 785 - &