GA-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT EMITTING DIODES

被引：63

作者：

NIINA, T

MINATO, T

YONEDA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 06期

关键词：

D O I：

10.1143/JJAP.21.L387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L387 / L389

页数：3

共 9 条

[1] HIGH-CONDUCTIVITY HETERO-EPITAXIAL ZNSE FILMS [J].

BESOMI, P ;

WESSELS, BW .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :955-957

[2] NEAR BAND-EDGE LUMINESCENCE IN ZNSE GROWN FROM GALLIUM SOLUTION [J].

FITZPATRICK, BJ ;

BHARGAVA, RN ;

HERKO, SP ;

HARNACK, PM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :341-343

[3] GROWTH AND ELECTRICAL-PROPERTIES OF HIGHLY-CONDUCTIVE AS-GROWN ZINC SELENIDE CRYSTALS GROWN FROM THE MELT [J].

KIKUMA, I ;

FURUKOSHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) :2307-2311

[4]

KITAGAWA F, 1979, J ELECTROCHEM SOC, V126, P341

[5] NEAR-BAND-EDGE PHOTO-LUMINESCENCE IN ZNSE GROWN FROM INDIUM SOLUTION [J].

SHIRAKAWA, Y ;

KUKIMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2014-2019

[6] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].

STUTIUS, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658

[7] MOLECULAR-BEAM EPITAXY OF INDIUM-DOPED ZNSE [J].

YAO, T ;

SERA, T ;

MAKITA, Y ;

MAEKAWA, S .

SURFACE SCIENCE, 1979, 86 (JUL) :120-125

[8] PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

YAO, T ;

MAKITA, Y ;

MAEKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L741-L744

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-RESISTIVITY ZNSE FILMS [J].

YAO, T ;

MAKITA, Y ;

MAEKAWA, S .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :97-98

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