OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1020 - 1022

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[5] USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 67 - 70

[6] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) : 945 - 953

[7] UNINTENTIONAL DOPANTS INCORPORATED IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 847 - 850

[8] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1025 - &

[9] Ilegems M., 1975, J APPL PHYS, V46, P3059

[10] EDGE EMISSION INVOLVING MANGANESE IMPURITIES IN GAAS AT 4.2-DEGREES-K [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (09) : 265 - 268

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1020 - 1022

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[5] USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 67 - 70

[6] CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) : 945 - 953

[7] UNINTENTIONAL DOPANTS INCORPORATED IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 847 - 850

[8] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J]. PHYSICAL REVIEW, 1967, 164 (03): : 1025 - &

[9] Ilegems M., 1975, J APPL PHYS, V46, P3059

[10] EDGE EMISSION INVOLVING MANGANESE IMPURITIES IN GAAS AT 4.2-DEGREES-K [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (09) : 265 - 268