INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4512 - &

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[3] ASHEN DJ, 1975, 4TH P INT S GAAS REL

[4] Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[5] BOIS D, TO BE PUBLISHED

[6] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (12) : 1141 - &

[7] CAIRNS B, 1970, J ELECTROCHEM SOC, V117, pC197

[8] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[9] FREE-TO-BOUND AND BOUND-TO-BOUND TRANSITIONS IN CDS [J]. PHYSICAL REVIEW, 1966, 141 (02): : 742 - &

[10] ACCEPTOR BEHAVIOUR OF GERMANIUM IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2397 - &

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4512 - &

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &

[3] ASHEN DJ, 1975, 4TH P INT S GAAS REL

[4] Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[5] BOIS D, TO BE PUBLISHED

[6] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (12) : 1141 - &

[7] CAIRNS B, 1970, J ELECTROCHEM SOC, V117, pC197

[8] CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[9] FREE-TO-BOUND AND BOUND-TO-BOUND TRANSITIONS IN CDS [J]. PHYSICAL REVIEW, 1966, 141 (02): : 742 - &

[10] ACCEPTOR BEHAVIOUR OF GERMANIUM IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (12) : 2397 - &