INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS

被引：540

作者：

ASHEN, DJ

DEAN, PJ

HURLE, DTJ

MULLIN, JB

WHITE, AM

机构：

[1] ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND

[2] STAND TELECOMMUN LABS,HARLOW,ESSEX,ENGLAND

来源：

关键词：

D O I：

10.1016/0022-3697(75)90043-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1041 / 1053

页数：13

共 48 条

[41] PHOTOLUMINESCENCE SPECTRA OF EXCITONS BOUND TO GROUP II ACCEPTORS IN INDIUM PHOSPHIDE
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WILLIAMS, EW
FAIRHURST, KM
BARDSLEY, W
DAY, B
DEAN, PJ
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (09) : 1099 - +
[42] ZEEMAN SPECTRA OF PRINCIPAL BOUND EXCITON IN SN-DOPED GALLIUM-ARSENIDE
WHITE, AM
HINCHLIFFE, I
DEAN, PJ
[J]. SOLID STATE COMMUNICATIONS, 1972, 10 (06) : 497 - +
[43] ACCEPTOR LEVELS IN GALLIUM-ARSENIDE
WHITE, AM
DEAN, PJ
ASHEN, DJ
MULLIN, JB
WEBB, M
DAY, B
GREENE, PD
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11): : L243 - L246
[44] PHOTOLUMINESCENCE SPECTRUM OF BOUND EXCITONS IN INDIUM PHOSPHIDE AND GALLIUM ARSENIDE
WHITE, AM
TAYLOR, LL
ASHEN, DJ
CLARKE, RC
MULLIN, JB
DEAN, PJ
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1727 - &
[45] ORIGIN OF BOUND EXCITON LINES IN INDIUM-PHOSPHIDE AND GALLIUM-ARSENIDE
WHITE, AM
DEAN, PJ
DAY, B
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (07): : 1400 - 1411
[46] WHITE AM, 1974, 12TH P INT C PHYS SE, P381
[47] WILLIAMS EW, 1969, J PHYS CHEM SOLIDS, V30, P1289, DOI 10.1016/0022-3697(69)90392-8
[48] ZSCHAUER KH, 1972, 4TH P INT S GAAS REL, P3