PHOTOLUMINESCENCE SPECTRA OF EXCITONS BOUND TO GROUP II ACCEPTORS IN INDIUM PHOSPHIDE

被引:77
作者
WHITE, AM
WILLIAMS, EW
FAIRHURST, KM
BARDSLEY, W
DAY, B
DEAN, PJ
机构
关键词
D O I
10.1016/0038-1098(72)90801-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1099 / +
页数:1
相关论文
共 14 条
[1]   Optical properties of the donor tin in gallium phosphide [J].
Dean, P. J. ;
Faulkner, R. A. ;
Kimura, S. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4062-4076
[2]   OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1971, 4 (06) :1926-&
[3]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[4]  
HOPFIELD JJ, 1964, P INT C PHYS SEMICON, P725
[5]  
MANCHON DD, 1970, 10TH P INT C PHYS SE, P760
[6]  
MULLIN JB, TO BE PUBLISHED
[7]  
NASSAU K, 1970, 10TH P INT C PHYS SE, P629
[8]   SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].
ONTON, A ;
FISHER, P ;
RAMDAS, AK .
PHYSICAL REVIEW, 1967, 163 (03) :686-&
[9]   ACCEPTOR LUMINESCENCE IN HIGH-PURITY N-TYPE GAAS [J].
ROSSI, JA ;
WOLFE, CM ;
DIMMOCK, JO .
PHYSICAL REVIEW LETTERS, 1970, 25 (23) :1614-&
[10]  
WHITE AA, TO BE PUBLISHED