共 16 条
- [1] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &BOGARDUS, EHBEBB, HB
- [2] RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDE[J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 183 - &DINGLE, RRODGERS, KF
- [3] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE[J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &DINGLE, R
- [4] ELECTRON SPIN RESONANCE IN NORMAL-TYPE GAAS[J]. PHYSICS LETTERS, 1963, 7 (01): : 23 - 24DUNCAN, WSCHNEIDER, EE
- [5] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &GILLEO, MABAILEY, PTHILL, DE
- [6] EXCITON RECOMBINATION RADIATION OF GAAS-ZN[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1863 - &HILL, DE
- [7] SHALLOW DONOR LEVELS OF INSB IN A MAGNETIC FIELD[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (02) : 271 - &LARSEN, DM
- [8] ROSSI, TO BE PUBLISHED
- [9] PHOTOLUMINESCENCE OF GE-DOPED GAAS GROWN BY VAPOR-PHASE EPITAXY[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (09) : 2225 - &SCHAIRER, WGRAMAN, W
- [10] DONOR-ACCEPTOR PAIR RECOMBINATION INVOLVING FIRST EXCITED STATE OF A DONOR IN GAAS[J]. PHYSICAL REVIEW, 1968, 176 (03): : 938 - &SHAH, JLEITE, RCCGORDON, JP