RADIATIVE LIFETIMES IN N-TYPE GALLIUM ARSENIDE

被引：7

作者：

DINGLE, R

RODGERS, KF

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 06期

关键词：

D O I：

10.1063/1.1652766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radiative lifetimes and time-resolved spectra have been obtained for high-purity n-type gallium arsenide at low temperatures. The ∼ 1.51-eV bands, generally associated with the annihilation of free and bound excitons, decay very rapidly, τ < 15 nsec. The 1.49-eV band, variously described as donor-acceptor recombination or as a free-to-bound recombination, has a longer nonexponential decay. For this band, the time-resolved spectra show a steady shift to lower energy as the delay after the pulse is lengthened. The conclusion drawn is, that the 1.49-eV band arises from a D-A recombination process. © 1969 The American Institute of Physics.

引用

页码：183 / &

共 8 条

[1]

ALAGUILL CB, 1964, J PHYS CHEM SOLIDS, V25, P837

[2] IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GAAS (RECOMBINATION RADIATION FAST ELECTRON BEAM PUMPING IMPURITY EFFECTS E) [J].