TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN CADMIUM-DOPED EPITAXIAL GAAS

被引：56

作者：

WILLIAMS, EW

CHAPMAN, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 06期

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D O I：

10.1063/1.1709947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2547 / &

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共 20 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P196
[2] COMMON OCCURENCE OF ARTIFACTS OR GHOST PEAKS IN SEMICONDUCTOR INJECTION ELECTROLUMINESCENCE SPECTRA
CARR, WN
BIARD, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2776 - &
[3] CHANG CM, 1964, 50642 STANF EL LAB T
[4] IDENTIFICATION OF SATELLITE PEAKS IN INJECTION LUMINESCENCE FROM GALLIUM ARSENIDE TRANSISTORS
CHAPMAN, RA
HUTCHINSON, WG
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (06) : 625 - +
[5] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[6] GROSS EF, 1966, FIZ TVERD TELA+, V7, P1785
[7] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[8] EDGE ABSORPTION AND PHOTOLUMINESCENCE IN CLOSELY COMPENSATED GaAs
Lucovsky, G.
Varga, A. J.
Schwarz, R. F.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (01) : 9 - 13
[9] EFFECTS OF ACCEPTOR CONCENTRATION GRADIENTS IN GAAS JUNCTIONS ON ENERGY OF FLUORESCENCE PEAK
LUCOVSKY, G
VARGA, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (11) : 3419 - &
[10] MEYERHOFER D, 1960, P INT C SEMICONDUCTO, P958