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EFFECTS OF ACCEPTOR CONCENTRATION GRADIENTS IN GAAS JUNCTIONS ON ENERGY OF FLUORESCENCE PEAK
被引:11
作者
:
LUCOVSKY, G
论文数:
0
引用数:
0
h-index:
0
LUCOVSKY, G
VARGA, AJ
论文数:
0
引用数:
0
h-index:
0
VARGA, AJ
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1964年
/ 35卷
/ 11期
关键词
:
D O I
:
10.1063/1.1713234
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3419 / &
相关论文
共 6 条
[1]
EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS
BRAUNSTEIN, R
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0
引用数:
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BRAUNSTEIN, R
PANKOVE, JI
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0
引用数:
0
h-index:
0
PANKOVE, JI
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
[J].
APPLIED PHYSICS LETTERS,
1963,
3
(02)
: 31
-
33
[2]
EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GAAS DIODES
DOUSMANIS, GC
论文数:
0
引用数:
0
h-index:
0
DOUSMANIS, GC
MUELLER, CW
论文数:
0
引用数:
0
h-index:
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MUELLER, CW
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
[J].
APPLIED PHYSICS LETTERS,
1963,
3
(08)
: 133
-
135
[3]
KEYES RJ, 1962, P IRE, V50, P1822
[4]
RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS
LUCOVSKY, G
论文数:
0
引用数:
0
h-index:
0
LUCOVSKY, G
REPPER, CJ
论文数:
0
引用数:
0
h-index:
0
REPPER, CJ
[J].
APPLIED PHYSICS LETTERS,
1963,
3
(05)
: 71
-
72
[5]
PILKUHN MH, 1964, T METALL SOC AIME, V230, P296
[6]
IMPURITY BAND IN SEMICONDUCTORS WITH SMALL EFFECTIVE MASS
STERN, F
论文数:
0
引用数:
0
h-index:
0
STERN, F
TALLEY, RM
论文数:
0
引用数:
0
h-index:
0
TALLEY, RM
[J].
PHYSICAL REVIEW,
1955,
100
(06):
: 1638
-
1643
←
1
→
共 6 条
[1]
EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS
BRAUNSTEIN, R
论文数:
0
引用数:
0
h-index:
0
BRAUNSTEIN, R
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
PANKOVE, JI
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
[J].
APPLIED PHYSICS LETTERS,
1963,
3
(02)
: 31
-
33
[2]
EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GAAS DIODES
DOUSMANIS, GC
论文数:
0
引用数:
0
h-index:
0
DOUSMANIS, GC
MUELLER, CW
论文数:
0
引用数:
0
h-index:
0
MUELLER, CW
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
[J].
APPLIED PHYSICS LETTERS,
1963,
3
(08)
: 133
-
135
[3]
KEYES RJ, 1962, P IRE, V50, P1822
[4]
RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS
LUCOVSKY, G
论文数:
0
引用数:
0
h-index:
0
LUCOVSKY, G
REPPER, CJ
论文数:
0
引用数:
0
h-index:
0
REPPER, CJ
[J].
APPLIED PHYSICS LETTERS,
1963,
3
(05)
: 71
-
72
[5]
PILKUHN MH, 1964, T METALL SOC AIME, V230, P296
[6]
IMPURITY BAND IN SEMICONDUCTORS WITH SMALL EFFECTIVE MASS
STERN, F
论文数:
0
引用数:
0
h-index:
0
STERN, F
TALLEY, RM
论文数:
0
引用数:
0
h-index:
0
TALLEY, RM
[J].
PHYSICAL REVIEW,
1955,
100
(06):
: 1638
-
1643
←
1
→