IDENTIFICATION OF SATELLITE PEAKS IN INJECTION LUMINESCENCE FROM GALLIUM ARSENIDE TRANSISTORS

被引：3

作者：

CHAPMAN, RA

HUTCHINSON, WG

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(66)90006-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：625 / +

页数：1

共 10 条

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[10] ELECTROLUMINESCENT GALLIUM ARSENIDE DIODES WITH NEGATIVE RESISTANCE
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[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2431 - &