EXCITON RECOMBINATION RADIATION OF GAAS-ZN

[1] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &

[2] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &

[3] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[4] HILL DA, TO BE PUBLISHED

[5] HILL DE, 1964, PHYS REV A, V133, P866

[6] LANDSBERG PT, 1958, SOLID STATE PHYS ELE, V1, P436

[7] LEITE RCC, 1968, B AM PHYS SOC, V13, P1477

[8] POSSIBILITY OF EXCITON BINDING TO IONIZED IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1526 - +

[9] MEYERHOFFER D, 1961, P INT C SEMICONDUCTO, P958

[10] MUNCHY G, 1967, J PHYS PARIS, V28, P307

[1] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &

[2] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &

[3] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[4] HILL DA, TO BE PUBLISHED

[5] HILL DE, 1964, PHYS REV A, V133, P866

[6] LANDSBERG PT, 1958, SOLID STATE PHYS ELE, V1, P436

[7] LEITE RCC, 1968, B AM PHYS SOC, V13, P1477

[8] POSSIBILITY OF EXCITON BINDING TO IONIZED IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 178 (03): : 1526 - +

[9] MEYERHOFFER D, 1961, P INT C SEMICONDUCTO, P958

[10] MUNCHY G, 1967, J PHYS PARIS, V28, P307