SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY

被引：11

作者：

BRANTLEY, WA

QUEISSER, HJ

HWANG, CJ

DAWSON, LR

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 10卷 / 12期

关键词：

D O I：

10.1016/0038-1098(72)90930-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1141 / &

共 18 条

[1]

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[4]

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[6] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS [J].

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BAILEY, PT ;

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[7] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[8] NEW DEEP-LEVEL LUMINESCENCE IN GAAS - SN [J].

KRESSEL, H ;

NELSON, H ;

HAWRYLO, FZ .

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[9]

MOORE GF, UNPUBLISHED

[10] ELECTRON TRANSPORT IN GAAS [J].

RODE, DL ;

KNIGHT, S .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2534-&

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