NEW DEEP-LEVEL LUMINESCENCE IN GAAS - SN

被引：33

作者：

KRESSEL, H

NELSON, H

HAWRYLO, FZ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 12期

关键词：

D O I：

10.1063/1.1656028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5647 / &

共 12 条

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AOKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) :1248-&

[2] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].

KRESSEL, H ;

HAWRYLO, FZ ;

LEFUR, P .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+

[3] RADIATIVE RECOMBINATION IN MELT-GROWN N-TYPE GE-DOPED GAAS [J].

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4383-&

[4] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[5] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

HAWRYLO, FZ ;

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5139-&

[6]

KRESSEL H, 1968, ELECTROCHEMICAL SOCI

[7]

NELSON N, 1963, RCA REV, V24, P603

[8] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].

QUEISSER, HJ ;

FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4895-&

[9]

VIELAND LJ, PRIVATE COMMUNICATIO

[10]

WEISBERG LR, 1959, PROPERTIES ELEMENT C, P257

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