PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE

被引：157

作者：

QUEISSER, HJ

FULLER, CS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 13期

关键词：

D O I：

10.1063/1.1708158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4895 / &

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[1] DOUBLE ACCEPTOR BEHAVIOR OF CU IN TE-DOPED GAAS
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[2] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER
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[3] BEHAVIOR OF LATTICE DEFECTS IN GAAS
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[6] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3
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[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322
[7] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS
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[8] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
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[9] SHALLOW ACCEPTOR LEVEL IN GAAS CRYSTALS RESULTING FROM CU DIFFUSION
FULLER, CS
ALLISON, HW
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1329 - &
[10] DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E
FULLER, CS
ALLISON, HW
WOLFSTIRN, KB
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (03) : 48 - &

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