TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS

被引：30

作者：

BUBE, RH

MACDONALD, HE

机构：

来源：

PHYSICAL REVIEW | 1962年 / 128卷 / 05期

关键词：

D O I：

10.1103/PhysRev.128.2071

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2071 / &

共 16 条

[1] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].

BLANC, J ;

MACDONALD, HE ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&

[2] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

PHYSICAL REVIEW LETTERS, 1962, 9 (06) :252-&

[3]

BLANC J, TO BE PUBLISHED

[4]

BLANC J, 1962, B AM PHYS SOC, V7, P89

[5] PROPERTIES OF CADMIUM SULFIDE CRYSTALS WITH HIGH IMPURITY CONCENTRATIONS [J].

BUBE, RH ;

LIND, EL ;

DREEBEN, AB .

PHYSICAL REVIEW, 1962, 128 (02) :532-&

[6]

BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062

[7] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J].

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :315-322

[8] PHOTO-HALL EFFECTS IN PHOTOCONDUCTORS [J].

BUBE, RH ;

MACDONALD, HE ;

BLANC, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :173-180

[9] EFFECT OF PHOTOEXCITATION ON MOBILITY IN PHOTOCONDUCTING INSULATORS [J].

BUBE, RH ;

MACDONALD, HE .

PHYSICAL REVIEW, 1961, 121 (02) :473-&

[10] PROPERTIES OF SEMI-INSULATING GAAS [J].

GOOCH, CH ;

HOLEMAN, BR ;

HILSUM, C .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&

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