DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E

被引：27

作者：

FULLER, CS

ALLISON, HW

WOLFSTIRN, KB

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 4卷 / 03期

关键词：

D O I：

10.1063/1.1753957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：48 / &

共 10 条

[1]

BAXTER RD, 1963, J ELECTROCHEM SOC, V110, pC187

[2] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].

BLANC, J ;

MACDONALD, HE ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&

[3] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

PHYSICAL REVIEW LETTERS, 1962, 9 (06) :252-&

[4] TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].

BUBE, RH ;

MACDONALD, HE .

PHYSICAL REVIEW, 1962, 128 (05) :2071-&

[5]

FOSI FD, 1960, J APPL PHYS, V31, P1105

[6] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J].

FULLER, CS ;

WHELAND, JM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) :173-&

[7]

FULLER CS, TO BE PUBLISHED

[8]

HALL RN, 1962, B AM PHYS SOC, V7, P234

[9]

Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[10] PRECIPITATION OF COPPER IN GALLIUM ARSENIDE [J].

WHELAN, JM ;

FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1507-1508

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