DOUBLE ACCEPTOR BEHAVIOR OF CU IN TE-DOPED GAAS

被引：38

作者：

ALLISON, HW

FULLER, CS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.1714522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2519 / &

共 14 条

[1]

BAXTER RD, 1963, J ELECTROCHEM SOC, V110, pC187

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[3]

FISTUL VI, 1964, FIZ TVERD TELA, V6, P3738

[4] SHALLOW ACCEPTOR LEVEL IN GAAS CRYSTALS RESULTING FROM CU DIFFUSION [J].

FULLER, CS ;

ALLISON, HW ;

WOLFSTIRN, KB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) :1329-&

[5] DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E [J].

FULLER, CS ;

ALLISON, HW ;

WOLFSTIRN, KB .

APPLIED PHYSICS LETTERS, 1964, 4 (03) :48-&

[6] EVIDENCE FOR DIVACANCY REACTION IN GAAS DURING CU DIFFUSION [J].

FULLER, CS ;

WOLFSTIRN, KB .

SOLID STATE COMMUNICATIONS, 1964, 2 (03) :87-90

[7]

FULLER CS, 1964, P INTERN C SEMICOND, P187

[8]

FULLER CS, TO BE PUBLISHED

[9] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[10]

HALL RN, 1962, B AM PHYS SOC, V7, P234

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