SHALLOW ACCEPTOR LEVEL IN GAAS CRYSTALS RESULTING FROM CU DIFFUSION

被引：22

作者：

FULLER, CS

ALLISON, HW

WOLFSTIRN, KB

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1964年 / 25卷 / 12期

关键词：

D O I：

10.1016/0022-3697(64)90047-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1329 / &

共 24 条

[1]

AHEARN AJ, PRIVATE COMMUNICATIO

[2]

BAXTER RD, 1963, J ELECTROCHEM SOC, V110, pC187

[3] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[4] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[5]

BROOKS, 1962, ULTRAPURIFICATION SE, P334

[6] HALL EFFECT INVESTIGATION ON LITHIUM-DIFFUSED GALLIUM ARSENIDE [J].

FULLER, CS ;

ALLISON, HW .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1227-&

[7] DEFECTS IN GAAS PRODUCED BY COPPER - GAAS-CU DEFECTS PRODUCED BY CU ENERGY ( IONIZATION ) LEVELS HALL EFFECTS RADIOCHEMICAL ANALYSIS 50-300 DEGREES K E [J].

FULLER, CS ;

ALLISON, HW ;

WOLFSTIRN, KB .

APPLIED PHYSICS LETTERS, 1964, 4 (03) :48-&

[8] REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].

FULLER, CS ;

DOLEIDEN, FH ;

WOLFSTIRN, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203

[9] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[10]

HALL RN, 1962, B AM PHYS SOC, V7, P234

← 1 2 3 →