HALL EFFECT INVESTIGATION ON LITHIUM-DIFFUSED GALLIUM ARSENIDE

[1] [Anonymous], [No title captured]

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[3] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &

[4] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

[5] DEFECTS IN GAAS PRODUCED BY LITHIUM [J]. APPLIED PHYSICS LETTERS, 1963, 2 (03) : 45 - 47

[6] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF LI IN GAAS SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2507 - &

[7] ELECTRICAL PROPERTIES OF LI IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) : 745 - &

[8] FULLER CS, 1963, APPL PHYS LETTERS, V34, P1914

[9] HALL RI, TO BE PUBLISHED

[10] HOFFMANN A, 1961, HALBLEITER PROBLEME, V6, P167

[1] [Anonymous], [No title captured]

[2] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[3] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &

[4] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

[5] DEFECTS IN GAAS PRODUCED BY LITHIUM [J]. APPLIED PHYSICS LETTERS, 1963, 2 (03) : 45 - 47

[6] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF LI IN GAAS SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2507 - &

[7] ELECTRICAL PROPERTIES OF LI IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) : 745 - &

[8] FULLER CS, 1963, APPL PHYS LETTERS, V34, P1914

[9] HALL RI, TO BE PUBLISHED

[10] HOFFMANN A, 1961, HALBLEITER PROBLEME, V6, P167