PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE

[21] EFFECT OF DEEP LEVELS ON OPTICAL AND ELECTRICAL PROPERTIES OF COPPER-DOPED GAAS P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1551 - &

[22] MORGAN TN, 1966, B AM PHYS SOC, V11, P188

[23] MOSS TS, 1954, P PHYS SOC, VB 67, P775

[24] PHOTOLUMINESCENCE AND SOLUTION GROWTH OF GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 311 - &

[25] PHOTOLUMINESCENCE OF SILICON-COMPENSATED GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2909 - &

[26] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1105 - 1108

[27] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[28] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[29] THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 169 - &

[30] PRECIPITATION OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1507 - 1508

[21] EFFECT OF DEEP LEVELS ON OPTICAL AND ELECTRICAL PROPERTIES OF COPPER-DOPED GAAS P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1551 - &

[22] MORGAN TN, 1966, B AM PHYS SOC, V11, P188

[23] MOSS TS, 1954, P PHYS SOC, VB 67, P775

[24] PHOTOLUMINESCENCE AND SOLUTION GROWTH OF GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 311 - &

[25] PHOTOLUMINESCENCE OF SILICON-COMPENSATED GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2909 - &

[26] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 1105 - 1108

[27] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

[28] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[29] THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 169 - &

[30] PRECIPITATION OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1507 - 1508