PHOTOLUMINESCENCE OF SILICON-COMPENSATED GALLIUM ARSENIDE

被引：42

作者：

QUEISSER, HJ

机构：

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D O I：

10.1063/1.1782150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2909 / &

共 12 条

[1] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[2] HOPFIELD JJ, 1964, P INT C PHYS SEMICON, P725
[3] STUDIES ON GROUP-III-V INTERMETALLIC COMPOUNDS
KOLM, C
KULIN, SA
AVERBACH, BL
[J]. PHYSICAL REVIEW, 1957, 108 (04): : 965 - 971
[4] LAWLEY KL, 1965, J ELECTROCHEM SOC, V112, pC68
[5] EDGE ABSORPTION AND PHOTOLUMINESCENCE IN CLOSELY COMPENSATED GaAs
Lucovsky, G.
Varga, A. J.
Schwarz, R. F.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (01) : 9 - 13
[6] MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P226
[7] INFLUENCE OF ARSENIC PRESSURE ON THE DOPING OF GALLIUM ARSENIDE WITH GERMANIUM
MCCALDIN, JO
HARADA, R
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (11) : 2065 - 2066
[8] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K
NATHAN, MI
BLUM, SE
BURNS, G
MARINACE, JC
[J]. PHYSICAL REVIEW, 1963, 132 (04): : 1482 - &
[9] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE
SPITZER, WG
WHELAN, JM
[J]. PHYSICAL REVIEW, 1959, 114 (01): : 59 - 63
[10] PHOTON-RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM
VANROOSBROECK, W
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1954, 94 (06): : 1558 - 1560