ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &

[2] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 483 - &

[3] ARCHER RJ, 1963, B AM PHYS SOC, V8, P310

[4] RECOMBINATION RADIATION IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 178 - &

[5] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[6] EFFECT OF PRESSURE ON SPONTANEOUS AND STIMULATED EMISSION FROM GAAS [J]. PHYSICAL REVIEW, 1963, 131 (05): : 2070 - &

[7] HALL RI, TO BE PUBLISHED

[8] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 366 - &

[9] HILL DA, TO BE PUBLISHED

[10] HILL DE, 1963, B AM PHYS SOC, V8, P202

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2391 - &

[2] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 483 - &

[3] ARCHER RJ, 1963, B AM PHYS SOC, V8, P310

[4] RECOMBINATION RADIATION IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 178 - &

[5] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[6] EFFECT OF PRESSURE ON SPONTANEOUS AND STIMULATED EMISSION FROM GAAS [J]. PHYSICAL REVIEW, 1963, 131 (05): : 2070 - &

[7] HALL RI, TO BE PUBLISHED

[8] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (09) : 366 - &

[9] HILL DA, TO BE PUBLISHED

[10] HILL DE, 1963, B AM PHYS SOC, V8, P202