ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS AT 77 DEGREES K

[21] NATHAN MI, TO BE PUBLISHED

[22] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[23] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 283 - &

[24] PANKOVE JI, 1962, B AM PHYS SOC, V7, P88

[25] SEMICONDUCTOR MASER OF GAAS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 91 - 92

[26] TURNER WJ, TO BE PUBLISHED

[27] WOODS JH, PRIVATE COMMUNICATIO

[21] NATHAN MI, TO BE PUBLISHED

[22] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184

[23] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (07) : 283 - &

[24] PANKOVE JI, 1962, B AM PHYS SOC, V7, P88

[25] SEMICONDUCTOR MASER OF GAAS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 91 - 92

[26] TURNER WJ, TO BE PUBLISHED

[27] WOODS JH, PRIVATE COMMUNICATIO