DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION

被引：36

作者：

AHN, BH

SHURTZ, RR

TRUSSELL, CW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.1659807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4512 / &

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