EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS

被引：47

作者：

CALAWA, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 12期

关键词：

D O I：

10.1063/1.90246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1020 / 1022

页数：3

共 8 条

[1]

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[2]

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[7] ACCEPTOR LEVELS IN GALLIUM-ARSENIDE [J].

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[8] IONIZED IMPURITY DENSITY IN N-TYPE GAAS [J].

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