IONIZED IMPURITY DENSITY IN N-TYPE GAAS

被引：139

作者：

WOLFE, CM

STILLMAN, GE

DIMMOCK, JO

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.1658704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：504 / &

共 16 条

[1] GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE [J].

ANDRE, E ;

LEDUC, JM .

MATERIALS RESEARCH BULLETIN, 1968, 3 (01) :1-&

[2]

BEER AC, 1963, GALVANOMAGNETIC EFFE, P111

[3]

BOLGER DE, 1967, 1966 P INT S GAAS RE, P16

[4]

Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158

[5] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE [J].

EDDOLLS, DV .

PHYSICA STATUS SOLIDI, 1966, 17 (01) :67-&

[6] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1020-&

[7] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[8] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J].

HAMBLETON, K ;

HOLEMAN, BR ;

HILSUM, C .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498) :1147-&

[9] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J].

KANG, CS ;

GREENE, PE .

APPLIED PHYSICS LETTERS, 1967, 11 (05) :171-&

[10] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

← 1 2 →