PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[3] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[4] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 481 - 484

[5] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470

[6] ROOM-TEMPERATURE OPERATION OF LOW-THRESHOLD SEPARATE-CONFINEMENT HETEROSTRUCTURE INJECTION LASER WITH DISTRIBUTED FEEDBACK [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 142 - 144

[7] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[8] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[9] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16

[10] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[3] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[4] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 481 - 484

[5] APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 467 - 470

[6] ROOM-TEMPERATURE OPERATION OF LOW-THRESHOLD SEPARATE-CONFINEMENT HETEROSTRUCTURE INJECTION LASER WITH DISTRIBUTED FEEDBACK [J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 142 - 144

[7] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[8] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[9] GROWTH OF A GAAS-GAAIAS SUPERLATTICE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16

[10] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9