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PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY
被引:37
作者
:
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,READING,PA 19604
BALLAMY, WC
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,READING,PA 19604
CHO, AY
机构
:
[1]
BELL TEL LABS INC,READING,PA 19604
[2]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1976年
/ 23卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1976.18431
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:481 / 484
页数:4
相关论文
共 10 条
[1]
AXELING GS, UNPUBLISHED
[2]
GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BALLAMY, WC
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(02)
: 783
-
785
[3]
CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[4]
STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS
DAVEY, JE
论文数:
0
引用数:
0
h-index:
0
DAVEY, JE
PANKEY, T
论文数:
0
引用数:
0
h-index:
0
PANKEY, T
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(07)
: 2203
-
&
[5]
ISHIBASHI Y, 1970, JPN J APPL PHYS, V9, P1007
[6]
LABUDA EF, MAY EL SOC SPRING M
[7]
REDLINE DC, UNPUBLISHED
[8]
SATO Y, 1972, ELECTRON COMMUN JPN, V55, P93
[9]
SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 904
-
&
[10]
EFFECTS OF VAPOR COMPOSITION ON GROWTH RATES OF FACETED GALLIUM ARSENIDE HOLE DEPOSITS
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 777
-
&
←
1
→
共 10 条
[1]
AXELING GS, UNPUBLISHED
[2]
GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BALLAMY, WC
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(02)
: 783
-
785
[3]
CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[4]
STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS
DAVEY, JE
论文数:
0
引用数:
0
h-index:
0
DAVEY, JE
PANKEY, T
论文数:
0
引用数:
0
h-index:
0
PANKEY, T
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(07)
: 2203
-
&
[5]
ISHIBASHI Y, 1970, JPN J APPL PHYS, V9, P1007
[6]
LABUDA EF, MAY EL SOC SPRING M
[7]
REDLINE DC, UNPUBLISHED
[8]
SATO Y, 1972, ELECTRON COMMUN JPN, V55, P93
[9]
SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 904
-
&
[10]
EFFECTS OF VAPOR COMPOSITION ON GROWTH RATES OF FACETED GALLIUM ARSENIDE HOLE DEPOSITS
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
: 777
-
&
←
1
→