PREPARATION AND PROPERTIES OF GAAS DEVICES BY MOLECULAR-BEAM EPITAXY

[31] JOYCE BA, 1975, 3RD INT C VAP GROWTH

[32] DEFORMED LAYERS OBSERVED AT INTERFACE BETWEEN A SN-DOPED EPITAXIAL LAYER AND A CR-DOPED SUBSTRATE IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2882 - 2888

[33] KNOLLE WR, TO BE PUBLISHED

[34] Kuznetsov V. P., 1976, Soviet Physics - Crystallography, V20, P382

[35] LANG DV, 1976, DEVICE RESEARCH C SA

[36] SINGLE-TRANSVERSE-MODE INJECTION-LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 164 - 166

[37] TAPER COUPLERS FOR GAAS-ALXGA1-XAS WAVEGUIDE LAYERS PRODUCED BY LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1975, 26 (06) : 337 - 340

[38] LOSS MEASUREMENTS IN GAAS AND AL-XGA-1-XAS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND ENERGY-GAP [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1436 - 1450

[39] LOW-LOSS ALXGA1-XAS WAVEGUIDES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 456 - 458

[40] MILLER BI, 1976, AIME ELECTRONICS MAT

[31] JOYCE BA, 1975, 3RD INT C VAP GROWTH

[32] DEFORMED LAYERS OBSERVED AT INTERFACE BETWEEN A SN-DOPED EPITAXIAL LAYER AND A CR-DOPED SUBSTRATE IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2882 - 2888

[33] KNOLLE WR, TO BE PUBLISHED

[34] Kuznetsov V. P., 1976, Soviet Physics - Crystallography, V20, P382

[35] LANG DV, 1976, DEVICE RESEARCH C SA

[36] SINGLE-TRANSVERSE-MODE INJECTION-LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 164 - 166

[37] TAPER COUPLERS FOR GAAS-ALXGA1-XAS WAVEGUIDE LAYERS PRODUCED BY LIQUID-PHASE AND MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1975, 26 (06) : 337 - 340

[38] LOSS MEASUREMENTS IN GAAS AND AL-XGA-1-XAS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND ENERGY-GAP [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1436 - 1450

[39] LOW-LOSS ALXGA1-XAS WAVEGUIDES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 456 - 458

[40] MILLER BI, 1976, AIME ELECTRONICS MAT