GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION

被引：115

作者：

ARTHUR, JR

LEPORE, JJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.1315677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：545 / &

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