GROWTH OF A GAAS-GAAIAS SUPERLATTICE

被引：169

作者：

CHANG, LL ^{[1
]}

ESAKI, L ^{[1
]}

HOWARD, WE ^{[1
]}

LUDEKE, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.1317919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：11 / 16

页数：6

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共 20 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
[2] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION
ARTHUR, JR
LEPORE, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &
[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &
[4] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &
[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[6] GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (11) : 467 - &
[7] CHO AY, 1971, 1970 P S GAAS REL CO, P18
[8] EPITAXIAL GAAS FILMS DEPOSITED BY VACUUM EVAPORATION
DAVEY, JE
PANKEY, T
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1941 - &
[9] STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS
DAVEY, JE
PANKEY, T
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2203 - &
[10] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS
ESAKI, L
TSU, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &