GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD

[1] BLAKESLEE AE, 1971, 3 P INT S GALL ARS R, P283

[2] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[3] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &

[4] MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (09) : 565 - &

[5] CHO AY, 1971, 3RD P INT S GAAS, P18

[6] CHO AY, 1971, J APPL PHYS, V42, P4542

[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[8] GIESECKE G, 1966, SEMICONDUCT SEMIMET, V2, P73

[1] BLAKESLEE AE, 1971, 3 P INT S GALL ARS R, P283

[2] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[3] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &

[4] MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (09) : 565 - &

[5] CHO AY, 1971, 3RD P INT S GAAS, P18

[6] CHO AY, 1971, J APPL PHYS, V42, P4542

[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[8] GIESECKE G, 1966, SEMICONDUCT SEMIMET, V2, P73