RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS

被引：1593

作者：

CHANG, LL ^{[1
]}

ESAKI, L ^{[1
]}

TSU, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 12期

关键词：

D O I：

10.1063/1.1655067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：593 / 595

页数：3

共 13 条

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[4] INTERPRETATION OF SCANNING HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS WITH APPLICATION TO GAAS SURFACES [J].

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[8]

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[9]

KANE EO, 1969, TUNNELING PHENOMENA, pCH1

[10] GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY [J].

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ESAKI, L ;

CHANG, LL .

APPLIED PHYSICS LETTERS, 1974, 24 (09) :417-419

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