INTERPRETATION OF SCANNING HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS WITH APPLICATION TO GAAS SURFACES

被引:16
作者
DOVE, DB [1 ]
LUDEKE, R [1 ]
CHANG, LL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.1662472
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1897 / 1899
页数:3
相关论文
共 8 条
[1]  
CHANG LL, TO BE PUBLISHED
[6]  
Harding JW, 1937, PHILOS MAG, V23, P271
[7]   SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J].
HENDERSON, RC ;
HELM, RF .
SURFACE SCIENCE, 1972, 30 (02) :310-+
[8]  
MOON AR, 1972, ACTA CRYSTALLOGR, V20, P390