APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS

被引：42

作者：

CASEY, HC ^{[1
]}

CHO, AY ^{[1
]}

BARNES, PA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 470

页数：4

共 12 条

[1] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[2]

CASEY HC, TO BE PUBLISHED

[3] PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS [J].

CHO, AY ;

CASEY, HC .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1258-1263

[4] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&

[5] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[6] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J].

CHO, AY ;

HAYASHI, I .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4422-&

[7]

CHO AY, 1974, JUN DEV RES C SANT B

[8] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[9] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

HAYASHI, I ;

PANISH, MB ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&

[10] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS [J].

HWANG, CJ .

PHYSICAL REVIEW B, 1972, 6 (04) :1355-&

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