PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS

被引：18

作者：

CHO, AY ^{[1
]}

CASEY, HC ^{[1
]}

机构：

[1] TEL BELL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1258 / 1263

页数：6

共 22 条

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[3]

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[4]

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[7] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].

CHO, AY ;

HAYASHI, I .

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[8] EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :782-&

[9] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2074-&

[10] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

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JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&

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