USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

COLLINS, DM

机构：

[1] Corporate Solid State Laboratory, Varian Associates, Incorporated, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The use of SnTe as a source of donor impurities in the growth of n-type GaAs by molecular beam epitaxy (MBE) is investigated. Net carrier concentrations n between ∼1015 and ∼1018 cm-3 have been obtained with corresponding mobilities of ∼38 000 and 2100 cm 2 V-1 sec-1 at 77°K. Sharp changes in donor concentration have been obtained with no evidence for Sn accumulation at the surface. However, at higher donor concentrations (∼1018 cm -3) Te is found to accumulate at the surface.

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页码：67 / 70

页数：4

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