LOW-NOISE AND HIGH-POWER GAAS MICROWAVE FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：41

作者：

CHO, AY ^{[1
]}

DILORENZO, JV ^{[1
]}

HEWITT, BS ^{[1
]}

NIEHAUS, WC ^{[1
]}

SCHLOSSER, WO ^{[1
]}

RADICE, C ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：346 / 349

页数：4

共 10 条

[1]

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[2] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].

CHO, AY .

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[3] GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

CHEN, DR .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :30-31

[4] GROWTH OF PERIODIC STRUCTURES BY MOLECULAR-BEAM METHOD [J].

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APPLIED PHYSICS LETTERS, 1971, 19 (11) :467-&

[5] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

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WIEGMANN, W ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[6]

HEWITT BS, UNPUBLISHED

[7] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J].

MILLER, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) :1103-&

[8]

NIEHAUS WC, 1976, 1976 N AM S GAAS ST

[9]

NOZAKI T, 1975, P INT S GALLIUM ARSE, P46

[10]

TURNER JA, 1969, 1968 P S GAAS REL CO, P195

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