LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

BANDY, SG

COLLINS, DM

NISHIMOTO, CK

机构：

[1] Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 08期

关键词：

Field-effect transistors; Gallium arsenide; Molecular-beam epitaxial growth;

D O I：

10.1049/el:19790154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of m.b.e. GaAs suitable for f.e.t. fabrication is reported. The m.b.e. structure consists of an n+ = 2.5 × 1018 cm−3 contact layer on top of an n = 3.5 × 1017 cm−3 active layer. Using this material, f.e.t.s have been fabricated that have a minimum noise figure of 1.5 dB with an associated gain of 15 dB at 8 GHz. These are the best results yet reported for low-noise m.b.e. GaAs f.e.t.s. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：218 / 219

页数：2

共 12 条

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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 219 - 221

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