GAAS MESFET TECHNOLOGY AND CHARACTERISTICS FOR OPTICAL COMMUNICATION-SYSTEMS

被引:7
作者
DEKKERS, JJM
FILENSKY, W
BENEKING, H
机构
关键词
D O I
10.1049/el:19780185
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:272 / 274
页数:3
相关论文
共 3 条
  • [1] BENEKING H, 1976, IEEE INT S MICROWAVE, P158
  • [2] GAAS MESFET AS A PULSE REGENERATOR, AMPLIFIER, AND LASER MODULATOR IN GBIT-S RANGE
    FILENSKY, W
    KLEIN, HJ
    BENEKING, H
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (03) : 276 - 280
  • [3] ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS
    RODE, DL
    SCHWARTZ, B
    DILORENZO, JV
    [J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1119 - 1123